Enhanced Light Extraction of Infrared AlGaAs-Based LEDs With Micron Array

In order to improve the light extraction efficiency (LEE) of a plane AlGaAs-based LED (Device A), three different surface periodic micron-scale arrays, micron pillar B), truncated cone C) and D), are prepared by conventional ultra-violet (UV) lithography. The morphology devices B–D is characterized scanning electron microscopy (SEM). array structures photon escape probabilities. comparison Device A, output powers (LOPs) Devices increase 54.0%, 145.5% 157.2% at an injection current 500 mA, respectively. Moreover, we use Monte Carlo ray-tracing method simulate LEE four devices. energy distribution B-D more concentrated in middle region contrast with A.